A Temperature-Dependent dVCE/dt model for Field-Stop IGBT at Turn-off Transient
Abstract
In this paper, an analytical model is proposed to model collector-emitter voltage rising slope (dVCE=dt) of fieldstop (FS) IGBT during turn-off transient. Thanks to TCAD simulation, the internal physics of the FS IGBT during VCE rise transient is investigated. Based on the improved understanding of the VCE rise transient, an analytical solution of the excess carrier distribution in the N-base region and FS layer is derived. An analytical model for dVCE/dt of FS IGBT is also proposed. The temperature dependency of various silicon material and device parameters are included in the model. In the end, the doublepulse tests are performed on 650V/40A and 1200V/40A FS IGBTs. The test results are compared with the analytical predictions and good agreement is obtained.
Info
Journal Article, 2023
UN SDG Classification
DK Main Research Area
Science/Technology
