Detection of Potential Induced Degradation in c-Si PV Panels Using Electrical Impedance Spectroscopy
Abstract
This work, for the first time, investigates an Impedance Spectroscopy (IS) based method for detecting potential-induced degradation (PID) in crystalline silicon photovoltaic (c-Si PV) panels. The method has been experimentally tested on a set of panels that were confirmed to be affected by PID by using traditional current-voltage (I-V) characterization methods, as well as electroluminescence (EL) imaging. The results confirm the effectiveness of the new approach to detect PID in PV panels.
Info
Conference Poster, 2016
UN SDG Classification
DK Main Research Area
Science/Technology
